N-channel power MOSFET featuring 30V drain-source breakdown voltage and 23A continuous drain current. This surface-mount device offers a low 45mΩ drain-source on-resistance and 45W maximum power dissipation. Designed for efficient switching, it boasts a 8.5ns turn-on delay and 12ns turn-off delay. Housed in a DPAK package, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
International Rectifier AUIRLR2703 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 450pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.5ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRLR2703 Datasheet
Download the complete datasheet for International Rectifier AUIRLR2703 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.