Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
International Rectifier AUIRLR2905TRR technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
No datasheet is available for this part.
