N-Channel Power MOSFET, 60V Drain-Source Voltage, 84A Continuous Drain Current, and 8.5mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a TO-262 package with through-hole mounting and a maximum power dissipation of 140W. Operating temperature range is -55°C to 175°C, with fast switching characteristics including a 19ns turn-on delay and 38ns turn-off delay. RoHS compliant and lead-free.
PackageTO-262
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1010EZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
84A
Current Rating
75A
Drain to Source Breakdown Voltage
60V
Drain to Source Voltage (Vdss)
60V
Fall Time
54ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
2.81nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
800
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Rds On Max
8.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
19ns
DC Rated Voltage
60V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010EZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010EZLPBF to view detailed technical specifications.
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