N-Channel Power MOSFET, 60V Drain-Source Voltage, 84A Continuous Drain Current, and 8.5mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a TO-262 package with through-hole mounting and a maximum power dissipation of 140W. Operating temperature range is -55°C to 175°C, with fast switching characteristics including a 19ns turn-on delay and 38ns turn-off delay. RoHS compliant and lead-free.
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International Rectifier IRF1010EZLPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 84A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 2.81nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Package Quantity | 800 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 60V |
| Width | 4.83mm |
| RoHS | Compliant |
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