International Rectifier
IRF1010NLPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating85A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRF1010NLPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
85A
Current Rating
85A
Drain to Source Voltage (Vdss)
55V
Input Capacitance
3.21nF
Lead Free
Lead Free
Max Power Dissipation
180W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
11mR
RoHS Compliant
Yes
Series
HEXFET®
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010NLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.