International Rectifier
IRF1010NLPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating85A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010NLPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 85A |
| Current Rating | 85A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 3.21nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1010NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010NLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.