International Rectifier
IRF1010NPBF
Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
Current Rating85A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1010NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
85A
Current Rating
85A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
11MR
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
3.21nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
39ns
Turn-On Delay Time
13ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010NPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010NPBF to view detailed technical specifications.
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