N-Channel Power MOSFET, surface mountable in a D2PAK package. Features a 55V drain-source voltage, 85A continuous drain current, and a low 0.011 ohm drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. Offers a maximum power dissipation of 180W and a wide operating temperature range from -55°C to 175°C. Includes lead-free and RoHS compliance.
PackageD2PAK
Current Rating85A
MountingSurface Mount
Power180W
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Technical Specifications
International Rectifier IRF1010NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
85A
Current Rating
85A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
11MR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.21nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
180W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
39ns
Turn-On Delay Time
13ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010NSPBF to view detailed technical specifications.
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