N-Channel Power MOSFET, surface mountable in a D2PAK package. Features a 55V drain-source voltage, 85A continuous drain current, and a low 0.011 ohm drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. Offers a maximum power dissipation of 180W and a wide operating temperature range from -55°C to 175°C. Includes lead-free and RoHS compliance.
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International Rectifier IRF1010NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 85A |
| Current Rating | 85A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 11MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.21nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 180W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
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