Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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International Rectifier IRF1010NSTRR technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 85A |
| Current Rating | 85A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 3.21nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 55V |
| RoHS | Not Compliant |
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