International Rectifier
IRF1010NSTRR
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageTO-263-3
Current Rating85A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF1010NSTRR technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
85A
Current Rating
85A
Drain to Source Voltage (Vdss)
55V
Input Capacitance
3.21nF
Lead Free
Contains Lead
Max Power Dissipation
180W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Rds On Max
11mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
55V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF1010NSTRR Datasheet
Download the complete datasheet for International Rectifier IRF1010NSTRR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.