N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 75A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 7.5mΩ Rds On (max) and 140W maximum power dissipation. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching parameters include an 18ns turn-on delay and 36ns turn-off delay.
PackageTO-262
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1010ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
94A
Current Rating
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
92ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
2.84nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Rds On Max
7.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ZLPBF to view detailed technical specifications.
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