N-Channel Power MOSFET, 55V Drain-Source Voltage, 75A Continuous Drain Current, and 7.5mΩ On-State Resistance. This single-element silicon FET features a D2PAK surface-mount package, 140W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include an 18ns turn-on delay and 36ns turn-off delay, with 92ns fall time.
PackageD2PAK
Current Rating75A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1010ZSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
94A
Current Rating
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
7.5MR
Dual Supply Voltage
55V
Fall Time
92ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.84nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
7.5mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ZSPBF to view detailed technical specifications.
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