Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Sign in to ask questions about the International Rectifier IRF1010ZSTRLPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF1010ZSTRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 7.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.84nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF1010ZSTRLPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
