International Rectifier
IRF1010ZSTRLPBF
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRF1010ZSTRLPBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
42A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
7.5MR
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.84nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Surface Mount
Packaging
Rail/Tube
Rds On Max
7.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1010ZSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1010ZSTRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.