N-Channel Power MOSFET, 60V drain-source voltage, 79A continuous drain current, and 8.4mΩ maximum drain-source on-resistance. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a D2PAK-3 package, 110W maximum power dissipation, and a 4V threshold voltage. Operating up to 175°C, this RoHS compliant component is lead-free.
PackageTO-263
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Technical Specifications
International Rectifier IRF1018ESTRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
79A
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
8.4MR
Lead Free
Lead Free
Max Operating Temperature
175°C
Max Power Dissipation
110W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1018ESTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1018ESTRLPBF to view detailed technical specifications.
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