N-Channel Power MOSFET, 60V drain-source voltage, 79A continuous drain current, and 8.4mΩ maximum drain-source on-resistance. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a D2PAK-3 package, 110W maximum power dissipation, and a 4V threshold voltage. Operating up to 175°C, this RoHS compliant component is lead-free.
PackageTO-263
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Technical Specifications
International Rectifier IRF1018ESTRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 79A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 8.4MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 110W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1018ESTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1018ESTRLPBF to view detailed technical specifications.
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