N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source voltage and 42A continuous drain current. Offers a low 0.036ohm drain-source on-resistance and 160W maximum power dissipation. Operates from -55°C to 175°C with a nominal gate-source voltage of 4V and a maximum of 20V. Includes 11ns turn-on and 45ns turn-off delay times, with 1.9nF input capacitance. This surface-mount component is RoHS compliant.
Sign in to ask questions about the International Rectifier IRF1310NSTRLPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF1310NSTRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 42A |
| Current Rating | 42A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 36mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF1310NSTRLPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
