N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source voltage and 42A continuous drain current. Offers a low 0.036ohm drain-source on-resistance and 160W maximum power dissipation. Operates from -55°C to 175°C with a nominal gate-source voltage of 4V and a maximum of 20V. Includes 11ns turn-on and 45ns turn-off delay times, with 1.9nF input capacitance. This surface-mount component is RoHS compliant.
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International Rectifier IRF1310NSTRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 42A |
| Current Rating | 42A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 36mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
| RoHS | Compliant |
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