Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
International Rectifier IRF1310NSTRRPBF technical specifications.
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
No datasheet is available for this part.
