International Rectifier
IRF1324PBF
Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1324PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
353A
Drain to Source Voltage (Vdss)
24V
Dual Supply Voltage
24V
Gate to Source Voltage (Vgs)
20V
Height
9.02mm
Input Capacitance
7.59nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
83ns
Turn-On Delay Time
17ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1324PBF Datasheet
Download the complete datasheet for International Rectifier IRF1324PBF to view detailed technical specifications.
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