N-channel power MOSFET featuring a 24V drain-source breakdown voltage and a low 0.8 milliohm drain-source on-resistance. This surface-mount device in a D2PAK package offers a continuous drain current of 429A and a maximum power dissipation of 300W. It operates with a gate-source voltage up to +/-20V and a nominal gate-source voltage of 4V. The component exhibits fast switching characteristics with turn-on delay time of 19ns and fall time of 93ns.
PackageD2PAK
Current Rating429A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1324S-7PPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
429A
Current Rating
429A
Drain to Source Breakdown Voltage
24V
Drain to Source Voltage (Vdss)
24V
Drain-source On Resistance-Max
1MR
Dual Supply Voltage
24V
Fall Time
93ns
Gate to Source Voltage (Vgs)
20V
Height
4.55mm
Input Capacitance
7.7nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
1mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
86ns
Turn-On Delay Time
19ns
DC Rated Voltage
24V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1324S-7PPBF Datasheet
Download the complete datasheet for International Rectifier IRF1324S-7PPBF to view detailed technical specifications.
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