N-channel MOSFET transistor designed for surface mount applications. Features a 24V drain-to-source breakdown voltage and a maximum continuous drain current of 340A. Offers a low on-resistance of 1.65mΩ at a nominal gate-to-source voltage of 4V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 300W. Includes fast switching characteristics with turn-on delay time of 17ns and fall time of 120ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier IRF1324SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
340A
Drain to Source Breakdown Voltage
24V
Drain to Source Voltage (Vdss)
24V
Dual Supply Voltage
24V
Fall Time
120ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
7.59nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
1.65mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
83ns
Turn-On Delay Time
17ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1324SPBF Datasheet
Download the complete datasheet for International Rectifier IRF1324SPBF to view detailed technical specifications.
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