N-channel MOSFET transistor designed for surface mount applications. Features a 24V drain-to-source breakdown voltage and a maximum continuous drain current of 340A. Offers a low on-resistance of 1.65mΩ at a nominal gate-to-source voltage of 4V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 300W. Includes fast switching characteristics with turn-on delay time of 17ns and fall time of 120ns.
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International Rectifier IRF1324SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Voltage (Vdss) | 24V |
| Dual Supply Voltage | 24V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 7.59nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 83ns |
| Turn-On Delay Time | 17ns |
| Width | 9.65mm |
| RoHS | Compliant |
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