International Rectifier
IRF140
Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-204AE
MountingThrough Hole
Power125W
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Technical Specifications
International Rectifier IRF140 technical specifications.
General
Package/Case
TO-204AE
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
100V
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Lead Pitch
11mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
125W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF140 Datasheet
Download the complete datasheet for International Rectifier IRF140 to view detailed technical specifications.
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