N-Channel Power MOSFET, 40V Drain-Source Voltage (Vdss), 162A Continuous Drain Current (ID), and 4mΩ maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-262 package for through-hole mounting, a maximum power dissipation of 200W, and operates within a temperature range of -55°C to 175°C. It offers a nominal gate-source voltage (Vgs) of 4V and a maximum Vgs of 20V, with turn-on delay time of 17ns and turn-off delay time of 72ns. This component is RoHS compliant and lead-free.
PackageTO-262
Current Rating162A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1404LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 162A |
| Current Rating | 162A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.54mm |
| Input Capacitance | 7.36nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1404LPBF Datasheet
Download the complete datasheet for International Rectifier IRF1404LPBF to view detailed technical specifications.
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