N-Channel Power MOSFET, 40V Drain-Source Voltage (Vdss), 162A Continuous Drain Current (ID), and 4mΩ maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-262 package for through-hole mounting, a maximum power dissipation of 200W, and operates within a temperature range of -55°C to 175°C. It offers a nominal gate-source voltage (Vgs) of 4V and a maximum Vgs of 20V, with turn-on delay time of 17ns and turn-off delay time of 72ns. This component is RoHS compliant and lead-free.
PackageTO-262
Current Rating162A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF1404LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
162A
Current Rating
162A
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4mR
Gate to Source Voltage (Vgs)
20V
Height
10.54mm
Input Capacitance
7.36nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
72ns
Turn-On Delay Time
17ns
DC Rated Voltage
40V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1404LPBF Datasheet
Download the complete datasheet for International Rectifier IRF1404LPBF to view detailed technical specifications.
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