N-Channel Power MOSFET, 40V Drain-Source Voltage, 190A Continuous Drain Current, and 3.7mR Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 200W maximum power dissipation, and operates from -55°C to 175°C. It includes a 4.34nF input capacitance and is RoHS compliant.
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International Rectifier IRF1404ZSTRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 190A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 4.34nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3200 |
| Packaging | Tape and Reel |
| Power Dissipation | 220W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
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