N-Channel Power MOSFET, 40V Drain-Source Voltage, 190A Continuous Drain Current, and 3.7mR Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 200W maximum power dissipation, and operates from -55°C to 175°C. It includes a 4.34nF input capacitance and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
Power220W
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Technical Specifications
International Rectifier IRF1404ZSTRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
190A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
3.7mR
Drain to Source Voltage (Vdss)
40V
Fall Time
58ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
4.34nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3200
Packaging
Tape and Reel
Power Dissipation
220W
Radiation Hardening
No
Rds On Max
3.7mR
RoHS Compliant
Yes
Turn-Off Delay Time
36ns
Turn-On Delay Time
18ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1404ZSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1404ZSTRLPBF to view detailed technical specifications.
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