N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 131A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.3mΩ Rds On resistance and 200W maximum power dissipation. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay and 110ns fall time. RoHS compliant and lead-free.
PackageTO-262
Current Rating131A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1405LPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 131A |
| Current Rating | 131A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.54mm |
| Input Capacitance | 5.48nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 5.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1405LPBF Datasheet
Download the complete datasheet for International Rectifier IRF1405LPBF to view detailed technical specifications.
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