N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 131A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.3mΩ Rds On resistance and 200W maximum power dissipation. Designed for through-hole mounting in a TO-262 package, it operates from -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay and 110ns fall time. RoHS compliant and lead-free.
PackageTO-262
Current Rating131A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1405LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
131A
Current Rating
131A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
110ns
Gate to Source Voltage (Vgs)
20V
Height
10.54mm
Input Capacitance
5.48nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
5.3mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
130ns
Turn-On Delay Time
13ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1405LPBF Datasheet
Download the complete datasheet for International Rectifier IRF1405LPBF to view detailed technical specifications.
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