International Rectifier
IRF1405ZL-7PPBF
Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CA, LEAD FREE, PLASTIC PACKAGE- 7
PackageTO-263-7
MountingThrough Hole
PolarityN-CHANNEL
Power230W
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Technical Specifications
International Rectifier IRF1405ZL-7PPBF technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 82ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.36nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 4.9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1405ZL-7PPBF Datasheet
Download the complete datasheet for International Rectifier IRF1405ZL-7PPBF to view detailed technical specifications.
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