N-Channel Power MOSFET, 55V Vds, 150A continuous drain current, and 4.9mΩ maximum drain-source on-resistance. Features a 230W maximum power dissipation and operates across a wide temperature range from -55°C to 175°C. This single-element silicon Metal-oxide Semiconductor FET is housed in a D2PAK-7 surface-mount package, offering fast switching speeds with a 16ns turn-on delay and 130ns fall time. RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power230W
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Technical Specifications
International Rectifier IRF1405ZS-7PPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 4.9MR |
| Dual Supply Voltage | 55V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.55mm |
| Input Capacitance | 5.36nF |
| Lead Free | Lead Free |
| Length | 10.35mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1405ZS-7PPBF Datasheet
Download the complete datasheet for International Rectifier IRF1405ZS-7PPBF to view detailed technical specifications.
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