N-Channel Power MOSFET, 55V Vds, 150A continuous drain current, and 4.9mΩ maximum drain-source on-resistance. Features a 230W maximum power dissipation and operates across a wide temperature range from -55°C to 175°C. This single-element silicon Metal-oxide Semiconductor FET is housed in a D2PAK-7 surface-mount package, offering fast switching speeds with a 16ns turn-on delay and 130ns fall time. RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power230W
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Technical Specifications
International Rectifier IRF1405ZS-7PPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
150A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
4.9MR
Dual Supply Voltage
55V
Fall Time
130ns
Gate to Source Voltage (Vgs)
20V
Height
4.55mm
Input Capacitance
5.36nF
Lead Free
Lead Free
Length
10.35mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
230W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
170ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1405ZS-7PPBF Datasheet
Download the complete datasheet for International Rectifier IRF1405ZS-7PPBF to view detailed technical specifications.
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