N-Channel Power MOSFET, featuring a 75V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 100A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 7.8mΩ at a nominal Vgs of 4V. Designed for surface-mount (SMD/SMT) applications, it is housed in a TO-263 (D2PAK-3) plastic package. The component operates within a temperature range of -55°C to 175°C and is RoHS compliant.
PackageTO-263
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Technical Specifications
International Rectifier IRF1407STRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 7.8mR |
| Dual Supply Voltage | 75V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1407STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1407STRLPBF to view detailed technical specifications.
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