N-Channel Power MOSFET, featuring a 75V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 100A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 7.8mΩ at a nominal Vgs of 4V. Designed for surface-mount (SMD/SMT) applications, it is housed in a TO-263 (D2PAK-3) plastic package. The component operates within a temperature range of -55°C to 175°C and is RoHS compliant.
PackageTO-263
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Technical Specifications
International Rectifier IRF1407STRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
100A
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
7.8mR
Dual Supply Voltage
75V
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1407STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1407STRLPBF to view detailed technical specifications.
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