International Rectifier
IRF150
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-204AE
MountingThrough Hole
Power150W
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Technical Specifications
International Rectifier IRF150 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Threshold Voltage | 2V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF150 Datasheet
Download the complete datasheet for International Rectifier IRF150 to view detailed technical specifications.
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