N-Channel Power MOSFET, featuring a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 240A. This silicon, metal-oxide semiconductor FET offers a low on-resistance (Rds On Max) of 3.3mΩ and a maximum power dissipation of 330W. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include a 4V threshold voltage and 5.73nF input capacitance.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1503PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
240A
Current Rating
75A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.73nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
330W
Radiation Hardening
No
Rds On Max
3.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
59ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1503PBF Datasheet
Download the complete datasheet for International Rectifier IRF1503PBF to view detailed technical specifications.
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