N-Channel Power MOSFET, featuring a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 240A. This silicon, metal-oxide semiconductor FET offers a low on-resistance (Rds On Max) of 3.3mΩ and a maximum power dissipation of 330W. Packaged in a TO-220AB through-hole mount, it operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include a 4V threshold voltage and 5.73nF input capacitance.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF1503PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 240A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.73nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 59ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1503PBF Datasheet
Download the complete datasheet for International Rectifier IRF1503PBF to view detailed technical specifications.
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