N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 75A continuous drain current. Offers a low 3.3mΩ drain-source on-resistance (Rds On) and 200W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 17ns turn-on delay and 48ns fall time. This surface-mount device is RoHS compliant and utilizes silicon metal-oxide semiconductor technology.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
International Rectifier IRF1503STRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.73nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
3.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
59ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF1503STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1503STRLPBF to view detailed technical specifications.
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