N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 75A continuous drain current. Offers a low 3.3mΩ drain-source on-resistance (Rds On) and 200W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 17ns turn-on delay and 48ns fall time. This surface-mount device is RoHS compliant and utilizes silicon metal-oxide semiconductor technology.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
International Rectifier IRF1503STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.73nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF1503STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF1503STRLPBF to view detailed technical specifications.
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