International Rectifier
IRF230
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-3
MountingThrough Hole
Power75W
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Technical Specifications
International Rectifier IRF230 technical specifications.
General
Package/Case
TO-3
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
200V
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
400mR
Dual Supply Voltage
200V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Lead Pitch
11mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
75W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Packaging
Bulk
Power Dissipation
75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Weight
0.01kg
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF230 Datasheet
Download the complete datasheet for International Rectifier IRF230 to view detailed technical specifications.
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