Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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International Rectifier IRF2805 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 55V |
| Power Dissipation | 330W |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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