N-Channel Power MOSFET, 55V Drain-Source Voltage, 135A Continuous Drain Current, and 4.7mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-262 package with through-hole mounting. It offers a maximum power dissipation of 200W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 68ns turn-off delay.
PackageTO-262
Current Rating135A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF2805LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
135A
Current Rating
135A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
110ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
5.11nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
4.7mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
68ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2805LPBF Datasheet
Download the complete datasheet for International Rectifier IRF2805LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
