N-Channel Power MOSFET, 55V Drain-Source Voltage, 135A Continuous Drain Current, and 4.7mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-262 package with through-hole mounting. It offers a maximum power dissipation of 200W and operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 68ns turn-off delay.
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International Rectifier IRF2805LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 135A |
| Current Rating | 135A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 5.11nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 4.83mm |
| RoHS | Compliant |
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