N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source voltage and 135A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 4.7mΩ on-state resistance and 200W maximum power dissipation. Designed for surface mounting, it operates from -55°C to 175°C with a 20V gate-source voltage rating. Includes fast switching times with a 14ns turn-on delay and 68ns turn-off delay.
PackageD2PAK
Current Rating135A
MountingSurface Mount
Power200W
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Technical Specifications
International Rectifier IRF2805SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
135A
Current Rating
135A
Drain to Source Voltage (Vdss)
55V
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
5.11nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
4.7mR
Power Dissipation
200W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
68ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
11.43mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2805SPBF Datasheet
Download the complete datasheet for International Rectifier IRF2805SPBF to view detailed technical specifications.
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