N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source voltage and 135A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 4.7mΩ on-state resistance and 200W maximum power dissipation. Designed for surface mounting, it operates from -55°C to 175°C with a 20V gate-source voltage rating. Includes fast switching times with a 14ns turn-on delay and 68ns turn-off delay.
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International Rectifier IRF2805SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 135A |
| Current Rating | 135A |
| Drain to Source Voltage (Vdss) | 55V |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.11nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 4.7mR |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 11.43mm |
| RoHS | Compliant |
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