Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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International Rectifier IRF2807 technical specifications.
| Continuous Drain Current (ID) | 82A |
| Current Rating | 82A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 13MR |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Bulk |
| RoHS Compliant | No |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 75V |
| RoHS | Not Compliant |
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