International Rectifier
IRF2807L
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating82A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRF2807L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
82A
Current Rating
82A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Input Capacitance
3.82nF
Lead Free
Contains Lead
Max Power Dissipation
230W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
200W
Rds On Max
13mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
75V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF2807L Datasheet
Download the complete datasheet for International Rectifier IRF2807L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.