International Rectifier
IRF2807LPBF
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
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Technical Specifications
International Rectifier IRF2807LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
82A
Drain to Source Breakdown Voltage
75V
Drain to Source Voltage (Vdss)
75V
Gate to Source Voltage (Vgs)
20V
Height
10.54mm
Input Capacitance
3.82nF
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Through Hole
RoHS Compliant
Yes
Turn-Off Delay Time
49ns
Turn-On Delay Time
13ns
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2807LPBF Datasheet
Download the complete datasheet for International Rectifier IRF2807LPBF to view detailed technical specifications.
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