N-Channel Power MOSFET, 75V Drain-Source Voltage, 82A Continuous Drain Current, and 0.013 ohm maximum Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a D2PAK package for surface mounting, a maximum power dissipation of 230W, and operates from -55°C to 175°C. It is RoHS compliant and lead-free.
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International Rectifier IRF2807SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 82A |
| Current Rating | 82A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 13MR |
| Dual Supply Voltage | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.82nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 230W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 75V |
| Width | 9.65mm |
| RoHS | Compliant |
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