N-Channel Power MOSFET, 75V Drain-Source Voltage, 82A Continuous Drain Current, and 0.013 ohm maximum Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a D2PAK package for surface mounting, a maximum power dissipation of 230W, and operates from -55°C to 175°C. It is RoHS compliant and lead-free.
PackageD2PAK
Current Rating82A
MountingSurface Mount
Power230W
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Technical Specifications
International Rectifier IRF2807SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
82A
Current Rating
82A
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
13MR
Dual Supply Voltage
75V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.82nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
230W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
49ns
Turn-On Delay Time
13ns
DC Rated Voltage
75V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2807SPBF Datasheet
Download the complete datasheet for International Rectifier IRF2807SPBF to view detailed technical specifications.
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