N-Channel Power MOSFET, 75V Drain-Source Voltage, 82A Continuous Drain Current, and 0.013 Ohm Max Drain-Source On-Resistance. Features include a 4V Threshold Voltage, 48ns Fall Time, 13ns Turn-On Delay, and 49ns Turn-Off Delay. This silicon, metal-oxide semiconductor FET operates within a -55°C to 175°C temperature range and offers 200W Max Power Dissipation. Packaged in a D2PAK-3 (TO-263) surface-mount plastic case, it is RoHS compliant and lead-free.
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International Rectifier IRF2807STRLPBF technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 82A |
| Current Rating | 82A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 13MR |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.69mm |
| Input Capacitance | 3.82nF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 75V |
| Width | 8.81mm |
| RoHS | Compliant |
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