N-Channel Power MOSFET, 75V Drain-Source Voltage, 82A Continuous Drain Current, and 0.013 Ohm Max Drain-Source On-Resistance. Features include a 4V Threshold Voltage, 48ns Fall Time, 13ns Turn-On Delay, and 49ns Turn-Off Delay. This silicon, metal-oxide semiconductor FET operates within a -55°C to 175°C temperature range and offers 200W Max Power Dissipation. Packaged in a D2PAK-3 (TO-263) surface-mount plastic case, it is RoHS compliant and lead-free.
PackageTO-263
Current Rating82A
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRF2807STRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
82A
Current Rating
82A
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
13MR
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Height
4.69mm
Input Capacitance
3.82nF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Packaging
Cut Tape
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
49ns
Turn-On Delay Time
13ns
DC Rated Voltage
75V
Width
8.81mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2807STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF2807STRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
