N-Channel Power MOSFET, 75V Drain-Source Voltage, 89A Continuous Drain Current, and 9.4mΩ On-Resistance. This single-element silicon Metal-Oxide Semiconductor FET features a D2PAK package for surface mounting, a maximum power dissipation of 170W, and operates within a temperature range of -55°C to 175°C. It is RoHS compliant and lead-free, with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V.
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International Rectifier IRF2807ZSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 89A |
| Current Rating | 75A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 9.4MR |
| Dual Supply Voltage | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.27nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 9.4mR |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 75V |
| Width | 9.65mm |
| RoHS | Compliant |
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