N-Channel Power MOSFET, 75V Drain-Source Voltage, 89A Continuous Drain Current, and 9.4mΩ On-Resistance. This single-element silicon Metal-Oxide Semiconductor FET features a D2PAK package for surface mounting, a maximum power dissipation of 170W, and operates within a temperature range of -55°C to 175°C. It is RoHS compliant and lead-free, with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V.
PackageD2PAK
Current Rating75A
MountingSurface Mount
Power170W
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Technical Specifications
International Rectifier IRF2807ZSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
89A
Current Rating
75A
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
9.4MR
Dual Supply Voltage
75V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.27nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
9.4mR
Power Dissipation
170W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
40ns
Turn-On Delay Time
18ns
DC Rated Voltage
75V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2807ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF2807ZSPBF to view detailed technical specifications.
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