N-Channel Power MOSFET, D2PAK package, featuring 75V Drain-Source Voltage (Vdss) and 89A Continuous Drain Current (ID). Offers low 9.4mΩ Rds On resistance for efficient power switching. Designed for surface mounting with a maximum power dissipation of 330W and a wide operating temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 18ns and fall time of 130ns.
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International Rectifier IRF2807ZSTRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 89A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.27nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 9.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
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