N-Channel Power MOSFET, D2PAK package, featuring 75V Drain-Source Voltage (Vdss) and 89A Continuous Drain Current (ID). Offers low 9.4mΩ Rds On resistance for efficient power switching. Designed for surface mounting with a maximum power dissipation of 330W and a wide operating temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 18ns and fall time of 130ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power330W
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Technical Specifications
International Rectifier IRF2807ZSTRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
89A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
2mR
Drain to Source Voltage (Vdss)
75V
Fall Time
130ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.27nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
330W
Radiation Hardening
No
Rds On Max
9.4mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
18ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF2807ZSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF2807ZSTRRPBF to view detailed technical specifications.
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