INTERNATIONAL RECTIFIER

IRF3007PBF

Datasheet

N-Channel MOSFET, 75V, 80A, 12.6mΩ, TO-220AB

International Rectifier

IRF3007PBF

Name: IRF3007PBF International Rectifier
Brand: International Rectifier
SKU: IRF3007PBF

N-Channel MOSFET, 75V, 80A, 12.6mΩ, TO-220AB

N-Channel Power MOSFET, 75V Drain-Source Voltage, 80A Continuous Drain Current, and 12.6mΩ Max On-State Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 200W power dissipation, and operates from -55°C to 175°C. It includes a 75V DC rated voltage and a 20V Gate-to-Source voltage rating.

PackageTO-220AB

Current Rating80A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

International Rectifier IRF3007PBF technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	80A
Current Rating	80A
Drain to Source Breakdown Voltage	75V
Drain to Source Voltage (Vdss)	75V
Drain-source On Resistance-Max	12.6MR
Dual Supply Voltage	75V
Fall Time	49ns
Gate to Source Voltage (Vgs)	20V
Height	16.51mm
Input Capacitance	3.27nF
Lead Free	Lead Free
Length	10.67mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	200W
Mount	Through Hole
Nominal Vgs	4V
Number of Elements	1
On-State Resistance	12.6R
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	200W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET® Series
Turn-Off Delay Time	55ns
Turn-On Delay Time	12ns
DC Rated Voltage	75V
Width	4.83mm