N-Channel Power MOSFET, 75V Drain-Source Voltage, 80A Continuous Drain Current, and 12.6mΩ Max On-State Resistance. This silicon Metal-oxide Semiconductor FET features a TO-220AB through-hole package, 200W power dissipation, and operates from -55°C to 175°C. It includes a 75V DC rated voltage and a 20V Gate-to-Source voltage rating.
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International Rectifier IRF3007PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 12.6MR |
| Dual Supply Voltage | 75V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 3.27nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 12.6R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 75V |
| Width | 4.83mm |
| RoHS | Compliant |
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