N-Channel Power MOSFET, 55V Drain-Source Voltage, 110A Continuous Drain Current, and 8mΩ Max Drain-Source On-Resistance. This single-element silicon FET features a D2PAK surface-mount package, supporting a maximum power dissipation of 200W and operating temperatures from -55°C to 175°C. It offers fast switching with turn-on delay of 14ns and turn-off delay of 50ns, and a gate-source voltage range of ±20V.
PackageD2PAK
Current Rating110A
MountingSurface Mount
Power200W
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Technical Specifications
International Rectifier IRF3205SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
110A
Current Rating
110A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
8MR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.247nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
200W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
50ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3205SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3205SPBF to view detailed technical specifications.
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