N-Channel Power MOSFET, 55V Drain-Source Voltage, 110A Continuous Drain Current, and 8mΩ Max Drain-Source On-Resistance. This single-element silicon FET features a D2PAK surface-mount package, supporting a maximum power dissipation of 200W and operating temperatures from -55°C to 175°C. It offers fast switching with turn-on delay of 14ns and turn-off delay of 50ns, and a gate-source voltage range of ±20V.
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International Rectifier IRF3205SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.247nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
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