N-Channel Power MOSFET, 55V Drain-Source Voltage, 75A Continuous Drain Current, and 6.5mΩ On-State Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a TO-263AB (D2PAK) surface-mount package, 170W maximum power dissipation, and operates from -55°C to 175°C. It offers fast switching speeds with turn-on delay of 18ns and turn-off delay of 45ns.
PackageD2PAK
Current Rating75A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3205ZSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
110A
Current Rating
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
6.5MR
Dual Supply Voltage
55V
Fall Time
67ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
3.45nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
6.5mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
170W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
45ns
Turn-On Delay Time
18ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3205ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRF3205ZSPBF to view detailed technical specifications.
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