N-channel power MOSFET featuring 55V drain-source breakdown voltage and 75A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 8mΩ Rds On resistance and 330W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching characteristics include a 16ns turn-on delay and 34ns fall time.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3305PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
140A
Current Rating
75A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
34ns
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
3.65nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
330W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
43ns
Turn-On Delay Time
16ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3305PBF Datasheet
Download the complete datasheet for International Rectifier IRF3305PBF to view detailed technical specifications.
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