N-channel power MOSFET featuring 55V drain-source breakdown voltage and 75A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 8mΩ Rds On resistance and 330W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching characteristics include a 16ns turn-on delay and 34ns fall time.
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International Rectifier IRF3305PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 140A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 3.65nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 55V |
| Width | 4.83mm |
| RoHS | Compliant |
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