International Rectifier
IRF3315
Power Field-Effect Transistor, 27A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
Current Rating27A
MountingThrough Hole
Power136W
Quick Jump:
Technical Specifications
International Rectifier IRF3315 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
27A
Current Rating
27A
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
70mR
Input Capacitance
1.3nF
Lead Free
Contains Lead
Max Power Dissipation
136W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
136W
Rds On Max
70mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
150V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF3315 Datasheet
Download the complete datasheet for International Rectifier IRF3315 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.