Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
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International Rectifier IRF3315L technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 82mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 150V |
| RoHS | Not Compliant |
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