International Rectifier
IRF3315L
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
PackageTO-262-3
Current Rating21A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF3315L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
21A
Current Rating
21A
Drain to Source Voltage (Vdss)
150V
Input Capacitance
1.3nF
Lead Free
Contains Lead
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Rds On Max
82mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
150V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF3315L Datasheet
Download the complete datasheet for International Rectifier IRF3315L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.