N-Channel Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers a low 82mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Operates with a maximum power dissipation of 3.8W and a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 9.6ns and fall time of 38ns. This surface-mount component is RoHS compliant and lead-free.
PackageD2PAK
Current Rating21A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3315SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 82mR |
| Dual Supply Voltage | 150V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 9.6ns |
| DC Rated Voltage | 150V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3315SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3315SPBF to view detailed technical specifications.
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