N-Channel Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers a low 82mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Operates with a maximum power dissipation of 3.8W and a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 9.6ns and fall time of 38ns. This surface-mount component is RoHS compliant and lead-free.
PackageD2PAK
Current Rating21A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF3315SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
21A
Current Rating
21A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
82mR
Dual Supply Voltage
150V
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
49ns
Turn-On Delay Time
9.6ns
DC Rated Voltage
150V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3315SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3315SPBF to view detailed technical specifications.
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