N-Channel Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers a low 82mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Operates with a maximum power dissipation of 3.8W and a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 9.6ns and fall time of 38ns. This surface-mount component is RoHS compliant and lead-free.
Sign in to ask questions about the International Rectifier IRF3315SPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF3315SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 82mR |
| Dual Supply Voltage | 150V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 9.6ns |
| DC Rated Voltage | 150V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF3315SPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
