N-Channel Power MOSFET, 150V Drain-Source Voltage, 21A Continuous Drain Current, and 82mΩ Max Drain-Source On-Resistance. Features a 3.8W Power Dissipation, 1.3nF Input Capacitance, and 38ns Fall Time. Operates from -55°C to 175°C and is surface mountable in a D2PAK package. This silicon Metal-oxide Semiconductor FET is lead-free and RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF3315STRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
82mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
82mR
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Rds On Max
82mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
49ns
Turn-On Delay Time
9.6ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3315STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3315STRLPBF to view detailed technical specifications.
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