N-Channel Power MOSFET, 150V Drain-Source Voltage, 21A Continuous Drain Current, and 82mΩ Max Drain-Source On-Resistance. Features a 3.8W Power Dissipation, 1.3nF Input Capacitance, and 38ns Fall Time. Operates from -55°C to 175°C and is surface mountable in a D2PAK package. This silicon Metal-oxide Semiconductor FET is lead-free and RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF3315STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 82mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 9.6ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3315STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF3315STRLPBF to view detailed technical specifications.
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