N-Channel Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers low 82mΩ drain-source resistance (Rds On Max) for efficient power handling. Operates with a 20V gate-source voltage and exhibits fast switching speeds with a 9.6ns turn-on delay and 38ns fall time. Designed for surface mounting with a maximum power dissipation of 94W and a wide operating temperature range from -55°C to 175°C. This silicon, metal-oxide semiconductor FET is RoHS compliant and packaged in tape and reel.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power94W
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Technical Specifications
International Rectifier IRF3315STRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
82mR
Drain to Source Voltage (Vdss)
150V
Fall Time
38ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.3nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
94W
Radiation Hardening
No
Rds On Max
82mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
49ns
Turn-On Delay Time
9.6ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3315STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3315STRRPBF to view detailed technical specifications.
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