
N-Channel Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers low 82mΩ drain-source resistance (Rds On Max) for efficient power handling. Operates with a 20V gate-source voltage and exhibits fast switching speeds with a 9.6ns turn-on delay and 38ns fall time. Designed for surface mounting with a maximum power dissipation of 94W and a wide operating temperature range from -55°C to 175°C. This silicon, metal-oxide semiconductor FET is RoHS compliant and packaged in tape and reel.
International Rectifier IRF3315STRRPBF technical specifications.
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