N-Channel Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 21A continuous drain current. Offers low 82mΩ drain-source resistance (Rds On Max) for efficient power handling. Operates with a 20V gate-source voltage and exhibits fast switching speeds with a 9.6ns turn-on delay and 38ns fall time. Designed for surface mounting with a maximum power dissipation of 94W and a wide operating temperature range from -55°C to 175°C. This silicon, metal-oxide semiconductor FET is RoHS compliant and packaged in tape and reel.
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International Rectifier IRF3315STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.3nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 9.6ns |
| Width | 9.65mm |
| RoHS | Compliant |
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