N-Channel Power MOSFET, 150V Drain-Source Voltage, 43A Continuous Drain Current, and 42mΩ Rds On. Features include a 2.4nF input capacitance, 12ns turn-on delay, and 69ns fall time. This silicon Metal-oxide Semiconductor FET is housed in a D2PAK surface-mount package, operating from -55°C to 175°C with a maximum power dissipation of 3.8W. It is RoHS compliant and supplied on tape and reel.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
International Rectifier IRF3415STRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
43A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
150V
Fall Time
69ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.4nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Rds On Max
42mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
71ns
Turn-On Delay Time
12ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3415STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3415STRRPBF to view detailed technical specifications.
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