N-Channel Power MOSFET, 150V Drain-Source Voltage, 43A Continuous Drain Current, and 42mΩ Rds On. Features include a 2.4nF input capacitance, 12ns turn-on delay, and 69ns fall time. This silicon Metal-oxide Semiconductor FET is housed in a D2PAK surface-mount package, operating from -55°C to 175°C with a maximum power dissipation of 3.8W. It is RoHS compliant and supplied on tape and reel.
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International Rectifier IRF3415STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 69ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.4nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 12ns |
| Width | 9.65mm |
| RoHS | Compliant |
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