
N-Channel Power MOSFET, 150V Drain-Source Voltage, 43A Continuous Drain Current, and 42mΩ Rds On. Features include a 2.4nF input capacitance, 12ns turn-on delay, and 69ns fall time. This silicon Metal-oxide Semiconductor FET is housed in a D2PAK surface-mount package, operating from -55°C to 175°C with a maximum power dissipation of 3.8W. It is RoHS compliant and supplied on tape and reel.
International Rectifier IRF3415STRRPBF technical specifications.
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