International Rectifier
IRF350
Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRF350 technical specifications.
General
Package/Case
TO-3
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
400V
Dual Supply Voltage
400V
Gate to Source Voltage (Vgs)
20V
Lead Pitch
11mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Weight
0.012kg
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF350 Datasheet
Download the complete datasheet for International Rectifier IRF350 to view detailed technical specifications.
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