N-Channel Power MOSFET, 150V Drain-Source Voltage, 41A Continuous Drain Current, and 0.045 Ohm On-State Resistance. Features include a 2.26nF input capacitance, 63ns fall time, 34ns turn-off delay, and 17ns turn-on delay. This silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 200W. Packaged in a D2PAK for surface mounting, it is RoHS and Lead Free compliant.
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International Rectifier IRF3515SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 41A |
| Current Rating | 41A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Dual Supply Voltage | 150V |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.26nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 4.5V |
| On-State Resistance | 45mR |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 150V |
| Width | 9.65mm |
| RoHS | Compliant |
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