N-Channel Power MOSFET, 150V Drain-Source Voltage, 41A Continuous Drain Current, and 0.045 Ohm On-State Resistance. Features include a 2.26nF input capacitance, 63ns fall time, 34ns turn-off delay, and 17ns turn-on delay. This silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 200W. Packaged in a D2PAK for surface mounting, it is RoHS and Lead Free compliant.
PackageD2PAK
Current Rating41A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF3515SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
41A
Current Rating
41A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Dual Supply Voltage
150V
Fall Time
63ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
2.26nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Surface Mount
Nominal Vgs
4.5V
On-State Resistance
45mR
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
34ns
Turn-On Delay Time
17ns
DC Rated Voltage
150V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF3515SPBF Datasheet
Download the complete datasheet for International Rectifier IRF3515SPBF to view detailed technical specifications.
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