International Rectifier
IRF3575DTRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PackageQFN EP
MountingSurface Mount
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Technical Specifications
International Rectifier IRF3575DTRPBF technical specifications.
General
| Package/Case | QFN EP |
| Continuous Drain Current (ID) | 303A |
| Drain to Source Voltage (Vdss) | 25V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF3575DTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF3575DTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.