IRF3575DTRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

PackageQFN EP

MountingSurface Mount

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International Rectifier IRF3575DTRPBF technical specifications.

Package/Case

QFN EP

Continuous Drain Current (ID)

303A

Drain to Source Voltage (Vdss)

25V

FET Type

2 N-Channel

Gate to Source Voltage (Vgs)

16V

Mount

Surface Mount

Number of Elements

Package Quantity

3000

Packaging

Tape and Reel

Radiation Hardening

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.